CMD275P4 Overview
The CMD275P4 is a wideband GaAs MMIC low-phase-noise amplifier, packaged in a leadless surface-mount format, making it highly suitable for demanding applications such as military, aerospace, and communication systems. At a frequency of 10 GHz, the amplifier provides a gain of 16 dB, a saturated output power of +20.5 dBm, and a noise figure of 5.5 dB. With an input signal at 10 GHz, it also achieves low phase noise performance of -165 dBc/Hz at a 10 kHz offset, ensuring high signal integrity in sensitive RF applications.
The CMD275P4 is designed with a 50-ohm input and output impedance, eliminating the need for additional RF port matching components and simplifying circuit integration. Its operation is based on gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology, which enables wideband amplification with minimal noise contribution and low phase distortion.
CMD275P4 Key Spec
Parameter | Value |
Manufacturer | Qorvo |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
Frequency | 0Hz ~ 26.5GHz |
P1dB | 18.5dBm |
Gain | 16.5dB |
Noise Figure | 6dB |
RF Type | General Purpose |
Supply Voltage | 4V ~ 7V |
Supply Current | 74mA |
Test Frequency | 0Hz ~ 10GHz |
Mounting Type | Surface Mount |
Package / Case | 24-VFQFN Exposed Pad |
Supplier Device Package | 24-QFN (4x4) |
CMD275P4 Features
l Ultra-Wideband Performance
l Low Phase Noise
l Low Current Consumption
l Pb-Free, RoHS Compliant 4x4 QFN Package
l Built using GaAs MMIC technology
l 50-ohm matched design, no RF port matching required
l Gain: 16 dB (at 10 GHz)
l Saturated Output Power: +20.5 dBm (at 10 GHz)
l Noise Figure: 5.5 dB (at 10 GHz)
l Phase Noise: -165 dBc/Hz (10 kHz offset, 10 GHz input)
l Operating Voltage / Current: 3–7 V / 74 mA
CMD275P4 Pin Diagram
Pin | Function | Description |
1, 2, 6 - 8, 12 - 14, 18 - 21, 24 | N/C | No connection requiredThese pins may be connected to RF / DC ground |
4 | RF in | 50 ohm matched input |
22, 23 | ACG2, 1 | Low frequency terminationAttach bypass capacitors per application circuit |
16 | RF out & Vdd | Power supply voltage and50 ohm matched output |
10, 11 | ACG4, 3 | Low frequency terminationAttach bypass capacitors per application circuit |
9 | Vgg | Power supply voltageDecoupling and bypass caps required |
3, 15, 17 and die paddle | Ground | Connect to RF / DC ground |
CMD275P4 Application Circuit
The CMD275P4 application circuit uses a standard RF amplifier setup. The input (RF in) connects through pins 4 and 5. Inside the chip, the amplifier increases the signal gain. The input also has bypass capacitors to reduce high-frequency noise, ensuring stable and low-noise performance.
The output (RF out) comes from pins 16 and 15. The amplified signal goes to a load or the next stage. Bypass capacitors at the output filter DC components and reduce RF noise. The “Vdd” label at the output provides the amplifier's power supply.
Power pins like Vgg and Vdd connect to ground through capacitors of different values (0.33 μF, 1000 pF, 100 pF, etc.). These capacitors filter power noise, helping the chip work stably over a wide frequency range and keep low phase noise. The design shows CMD275P4's wideband, high-gain, and low-noise features, while simplifying external matching because the chip is internally matched to 50 ohms.
Where to Use CMD275P4?
Communication Systems
The CMD275P4 is commonly used as an RF front-end amplifier in various wireless communication devices. It can amplify weak incoming signals with high gain while keeping low noise, ensuring clear and stable signals. Its wideband feature is suitable for multi-band communication, allowing devices to work reliably across different frequencies.
l Cellular base stations
l Radio stations
l Satellite communication terminals
Radar and Military Systems
In military and radar systems, CMD275P4's high gain and low-noise characteristics can amplify weak echo signals or encrypted communication signals, improving target detection and communication reliability. Its wideband design supports multiple radar frequency bands, adapting to complex operational environments.
l Ground radar
l Military communication transceivers
l Tactical UAV communications
Aerospace and Satellite Equipment
Aerospace and satellite communication equipment require very strict RF signal performance. CMD275P4 provides stable, low-noise, high-gain amplification, allowing weak signals to be effectively received or transmitted. Its wide frequency range ensures reliable operation even in complex aerospace environments.
l Satellite communication modules
l Spacecraft telemetry systems
Test and Measurement Instruments
In RF testing and measurement instruments, CMD275P4 can be used as a signal amplifier to increase signal strength, improving measurement accuracy and signal-to-noise ratio. Its low-noise property reduces measurement errors, and its wideband capability supports testing at multiple frequencies, making it suitable for professional labs and industrial testing equipment.
l Network analyzers
l Spectrum analyzers
l RF signal generators.
Wireless Sensing and IoT Devices
In IoT and wireless sensor networks, CMD275P4 can enhance signal coverage, improving data transmission stability and reception sensitivity. Its low power consumption also benefits long-running sensor devices, enabling remote monitoring and real-time data collection.
l Smart sensor gateways
l Industrial wireless transmission systems
How to Use CMD275P4?
The CMD275P4 is a high-gain, low-noise RF amplifier that requires proper biasing to achieve optimal performance. It uses a positive drain supply (Vdd) and a positive gate supply (Vgg). Following the recommended biasing procedure ensures the best gain, linearity, and low-noise operation.
1. Recommended Bias Voltages
Set the drain voltage (Vdd) to +5.0 V and the gate voltage (Vgg) to +3.0 V. Maintaining these voltages ensures efficient operation and minimal phase noise. Deviating from these values may reduce performance or cause instability.
2. Turn-ON Procedure
To safely power up the CMD275P4, apply Vdd first (+5 V), then Vgg (+3 V). This stepwise sequence ensures the transistor junctions are properly biased before the gate controls signal conduction, preventing stress on the device.
3. Turn-OFF Procedure
When powering down, turn off Vgg first, followed by Vdd. This order prevents unwanted current surges or voltage spikes that could damage the amplifier.
4. Alternative Biasing Methods
CMD275P4 also supports simultaneous biasing, where Vdd and Vgg are applied at the same time, and single-supply operation for simplified designs.
5. Applying RF Signals
RF input power can be applied at any time after biasing. Proper decoupling and bypass capacitors on Vdd and Vgg are recommended to maintain stable operation and low noise.
FAQs
What is CMD275P4?
CMD275P4 is a high-gain, low-noise, wideband RF amplifier. It is internally matched to 50 ohms, simplifying external matching.
Can I use simultaneous biasing or single-supply operation?
Yes. CMD275P4 allows both simultaneous biasing (Vdd and Vgg at the same time) and single-supply operation.
What precautions should I take during use?
Use well-filtered power supplies to minimize RF noise.
Provide adequate thermal management to prevent overheating.
Follow recommended PCB layout guidelines to maintain stability and wideband performance.
What applications are suitable for CMD275P4?
It is ideal for communication systems, radar and military systems, aerospace and satellite equipment, RF test instruments, IoT devices, and consumer wireless/multimedia systems.
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