SMUN5237DW1T1G
SMUN5237DW1T1G
SMUN5237DW1T1G
SMUN5237DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased SMUN5237DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased SMUN5237DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased SMUN5237DW1T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased SMUN5237DW1T1G
SMUN5237DW1T1G
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer
AMI Semiconductor/onsemi
RoHS
YES
Certification
Delivery
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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:SMUN5237DW1T1G
Description:TRANS 2NPN PREBIAS 0.187W SOT363
Lead Free Status / RoHS Status:
Other NamesSMUN5237DW1T1G-ND
","SMUN5237DW1T1GOSTR
Power - Max187mW
Base Part NumberMUN52**DW1T
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
PackagingTape & Reel (TR)
Manufacturer Standard Lead Time40 Weeks
Supplier Device PackageSC-88/SC70-6/SOT-363
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Transistor Type2 NPN - Pre-Biased (Dual)
Resistor - Emitter Base (R2)22 kOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Package / Case6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max)100mA
Series-
Voltage - Collector Emitter Breakdown (Max)50V
Frequency - Transition-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Resistor - Base (R1)47 kOhms
Meta Part NumberSMUN5237DW1T1GOSTR-ND
Current - Collector Cutoff (Max)500nA
Mounting TypeSurface Mount

Data sheet: Work in prgress, stay tuned!

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