RN2110MFV,L3F
RN2110MFV,L3F
RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN2110MFV,L3F
RN2110MFV,L3F
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHS
YES
Certification
Delivery
Payment

{{title}}
Price not available? Fill in the information below to send a quick RFQ, and we will respond promptly
{{ isClicked ? 'Submitted' : 'Submit RFQ' }}
Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:RN2110MFV,L3F
Description:X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status:
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageVESM
Meta Part NumberRN2110MFVL3F-ND
Current - Collector Cutoff (Max)100nA (ICBO)
Mounting TypeSurface Mount
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Transistor TypePNP - Pre-Biased
Resistor - Base (R1)4.7 kOhms
Series-
Package / CaseSOT-723
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Manufacturer Standard Lead Time16 Weeks
Other NamesRN2110MFVL3F

Data sheet: Work in prgress, stay tuned!

Close
2025 New Offers


Info of submission


Email:ande