Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHS
YES
Certification




Delivery

Payment

TYPE | DESCRIPTION |
Part Number: | RN1102MFV,L3F |
Description: | TRANS PREBIAS NPN 50V 0.15W VESM |
Lead Free Status / RoHS Status: | |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector Cutoff (Max) | 500nA |
Meta Part Number | RN1102MFVL3FCT-ND |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 150mW |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Other Names | RN1102MFV(TL3T)CT ","RN1102MFV(TL3T)CT-ND ","RN1102MFVL3F(BCT ","RN1102MFVL3F(BCT-ND ","RN1102MFVL3FCT |
Resistor - Base (R1) | 10 kOhms |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
Series | - |
Manufacturer Standard Lead Time | 16 Weeks |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Transistor Type | NPN - Pre-Biased |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Resistor - Emitter Base (R2) | 10 kOhms |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Mounting Type | Surface Mount |
Packaging | Cut Tape (CT) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Data sheet: Work in prgress, stay tuned!