HYG009N04LS1C2
HYG009N04LS1C2
HYG009N04LS1C2
HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
HYG009N04LS1C2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
HUAYI
RoHS
YES
Certification
Delivery
Payment

{{title}}
Price not available? Fill in the information below to send a quick RFQ, and we will respond promptly
{{ isClicked ? 'Submitted' : 'Submit RFQ' }}
Specifications
Data Sheet
ModelHYG009N04LS1C2
ManufacturerHUAYI
PackageDFN-8(5.1x5.8)
Drain to Source Voltage40V
Current - Continuous Drain(Id)200A
Operating Temperature-55℃~+175℃
TypeN-Channel
RDS(on)1.4mΩ@4.5V
Pd - Power Dissipation75W
Gate Threshold Voltage (Vgs(th))3V@250uA
Reverse Transfer Capacitance (Crss@Vds)58pF
Number1 N-Channel
Input Capacitance(Ciss)5.876nF
Gate Charge(Qg)89nC@10V
Output Capacitance(Coss)1278pF

Data sheet: HYG009N04LS1C2.pdf

Close
2025 New Offers


Info of submission


Email:ande