Empowering 5G with GaN Power Amplifier HTH2D49P060P

Author: ANDESOURCE Date: 25/04/16
279

As global 5G infrastructure accelerates, engineers and OEMs alike face the same challenge: delivering higher power and better efficiency in smaller, more thermally constrained systems. With the explosive demand for small cells, massive MIMO, and repeaters, it’s clear—RF front-ends must evolve.

 

That’s why ANDESOURCE recommends HTH2D49P060P, a 60 W GaN asymmetrical Doherty power amplifier, offers wideband performance from 4.5 to 5.0 GHz, targeting the critical 3GPP 5G NR FR1 N79 band and 4G LTE band B79. Compact, linear, and thermally rugged, this amplifier delivers exactly what today’s 5G designers need.

 

Key Specifications at a Glance

 

Parameter

Value

Operating   Frequency Range

4.5-5.0   GHz

Saturation   Output Power

60W

Gain   (typical @ 4700 MHz)

15.3   dB

Efficiency   (typical @ 4700 MHz)

46.4%

Linearity   (ACPR@5MHz)

Up   to -38.1 dBc

Operating   Drain Voltage

48V

Package   Type

DFN   7x 6.5 mm 6-pin

Thermal   Resistance (DieCase)

4.0   K/W (IR), 6.1 K/W (FEA)

Compliance

RoHS   Compliant, ESD-HBM Class 1A, MSL3, ESD-CDM Class C1

 

(Contact us for a quote)

 

EVB Layout

 Empowering 5G with GaN Power Amplifier HTH2D49P060P

 

 

Product Highlights

 

1. Wideband Performance for Global 5G Coverage

With operation from 4.5 to 5.0 GHz, the HTH2D49P060P is optimized for Band N79, a globally adopted 5G frequency. This makes it ideal for both current deployments and future-proof designs across international markets.

 

2. High Efficiency = Lower TCO

Typical efficiency reaches up to 46.6%, even at 5 GHz—reducing power consumption, heat dissipation, and overall system cooling costs. This leads to lower total cost of ownership (TCO), especially in multi-antenna systems.

 

3. Excellent Linearity for Spectrum Compliance

Thanks to its asymmetrical Doherty architecture, the amplifier delivers outstanding linearity, with ACPR up to –38.1 dBc using a 5 MHz WCDMA test signal. This minimizes filtering and supports high spectral efficiency—crucial for 5G base stations and dense RF environments.

 

4. Compact DFN Package for Dense Integration

At just 7 x 6.5 mm, this DFN package is perfect for space-constrained applications such as 5G small cells or antenna arrays, enabling designers to pack more performance into smaller PCB footprints.

 

5. Thermal and Electrical Ruggedness

Built to handle Junction Temps up to +275°C, the device is designed for outdoor, high-power, and high-duty applications. With ESD protection (HBM: 1A,CDM:C1) and MSL3 reflow compatibility, it's robust enough for production environments.

 

6. Strong Gain with Smooth Roll-Off

Delivers peak gain of 15.5 dB near 4600 MHz, with controlled tapering to 13.8 dB at 5 GHz—simplifying multi-band matching, reducing driver stage needs, and helping designers maintain predictable output power across wideband 5G deployments.

 

(Contact us for a quote.)

 Empowering 5G with GaN Power Amplifier HTH2D49P060P

 

Application Analysis

 

5G Small Cells

Small cells demand high-performance components in tight spaces. The HTH2D49P060P delivers saturated power and broadband linearity without needing large heat sinks or complex matching networks. Its size and efficiency make it an ideal driver or final-stage PA.

 

Massive MIMO (mMIMO) Active Antenna Arrays

As mMIMO deployments grow, each antenna path requires its own high-efficiency amplifier. The HTH2D49P060P supports scalable architectures with its:

 

l  High linearity to minimize interference between paths

 

l  Small footprint for dense packing

 

l  Consistent gain and output power across bands

 

Repeaters and DAS (Distributed Antenna Systems)

In repeaters and DAS, signal clarity and broadband power performance are paramount. This amplifier provides strong gain and efficiency across the 4.5–5.0 GHz range, enabling coverage extension and signal integrity even in challenging RF environments.

 

Macro Base Station Driver Stage

Serving as a driver amplifier, the HTH2D49P060P easily interfaces with high-power final stages. It provides clean, amplified signals with excellent back-off efficiency, streamlining base station RF chains.

 

 

(Contact us for a quote.)

 

Why Choose ANDESOURCE HOLTO RF Chip Solutions

 

Choosing ANDESOURCE’s HOLTO RF chip solutions means unlocking a new level of performance, efficiency, and reliability—designed to power next-generation wireless infrastructure with confidence.

 

Sustainable Supply

Avoid supply chain disruptions with a stable and reliable source for high-performance RF chips. ANDESOURCE ensures consistent availability, helping your projects stay on track and within budget.

 

Original Factory Support

Receive full technical debugging assistance directly from the factory, ensuring seamless integration and peak performance of our RF chips in your system.

 

Cost Effectiveness

Achieve exceptional performance without overspending. HOLTO delivers cutting-edge RF solutions that offer strong value for a wide range of 5G applications—from small cells to massive MIMO arrays.

 

Ready to elevate your RF systems with innovative, high-performance solutions?

 

Click here to get a quote or speak with our team. ANDESOURCE is here to help you source the right HOLTO components—reliably and efficiently


2025 New Offers


Info of submission


Email:ande